射频磁控溅射法制备(111)取向Pt薄膜

以稀土元素Pr薄膜为缓冲层,采用低功率射频磁控溅射法在室温玻璃衬底上成功制备了(111)强烈取向的Pt薄膜,研究了退火热处理工艺对Pt薄膜择优取向及晶粒尺寸的影响规律,并对Pt(111)取向生长机制进行了初步探讨。结果表明,所采用的退火工艺能够促进Pt纳米晶粒的逐步长大,但对Pt薄膜沿(111)择优取向生长的影响并不明显;保温5 h时晶粒生长较快,延长保温时间对晶粒生长速度的影响不大,但随着退火时间的增加,薄膜质量会越来越好。稀土Pr对Pt(111)择优取向生长可能有一定的促进作用。从简化工艺及降低成本角度考虑,该工艺优于以往的制备工艺,可望用做制备高取向PZT铁电薄膜所需的(111)强烈取向Pt底电极。

Preparation of (111) Orientation Preference Pt Films by RF Magnetron Sputtering

With the Pr film as buffer layer,strongly(111) oriented Pt films were prepared on room temperature glass substrates by lower power RF magnetron sputtering.The influences of annealing treatment on(111) orientation preference and crystalline size of Pt films were investigated,and growing mechanism of(111) orientation Pt films was preliminarily studied.The results show that annealing treatment process can promote Pt nanocrystals to grow gradually and has few influences on preferential orientation of Pt films.Nanocrystals grow quickly when annealing times are 5 hours,and grow slowly with lasting the annealing times.What's more,longer annealing times are,better quality of films is.Pr film may contribute to Pt(111) orientation growing.Taking simplified technology and reduced cost into account,this technology is superior to others technologies.(111) oriented Pt films prepared are expected to used as bottom electrodes of PZT films,and have exceptional application prospect.