Optimization of the process for preparing Al-doped ZnO thin films by sol-gel method |
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作者单位: | CHEN JianLin,CHEN Ding,CHEN ZhenHua College of Materials Science and Engineering,Hunan University,Changsha 410082,China |
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摘 要: | Transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route. The physical and chemical changes during thermal treatment were analyzed by TG-DSC spectra and the crystallization quality was characterized by XRD patterns. The optimized preheating and post-heating temperatures were determined at ~420℃ and ~530℃, respec-tively. From thermodynamic and kinetics views, we investigated the mechanism of orientation growth with (002) plane parallel to the substrates. The surface morphologies of the films, post-heated at 420℃, 450℃, 530℃ and 550℃, respectively, were observed by SEM micrographs. The film post-heated at 530℃ shows a homogenous dense microstructure and exhibits the minimum sheet resistance of 140 Ω/Sq. The visible optical transmittance of all the films is beyond 90%. In addition, the annealing treatment in vacuum can contribute greatly to the electrical conductivity.
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收稿时间: | 31 May 2007 |
Optimization of the process for preparing Al-doped ZnO thin films by sol-gel method |
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Authors: | JianLin Chen Ding Chen ZhenHua Chen |
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Affiliation: | (1) College of Materials Science and Engineering, Hunan University, Changsha, 410082, China |
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Abstract: | Transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route. The physical and chemical changes during thermal
treatment were analyzed by TG-DSC spectra and the crystallization quality was characterized by XRD patterns. The optimized
preheating and post-heating temperatures were determined at ∼420°C and ∼530°C, respectively. From thermodynamic and kinetics
views, we investigated the mechanism of orientation growth with (002) plane parallel to the substrates. The surface morphologies
of the films, post-heated at 420°C, 450°C, 530°C and 550°C, respectively, were observed by SEM micrographs. The film post-heated
at 530°C shows a homogenous dense microstructure and exhibits the minimum sheet resistance of 140 Ω/Sq. The visible optical
transmittance of all the films is beyond 90%. In addition, the annealing treatment in vacuum can contribute greatly to the
electrical conductivity. |
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Keywords: | transparent conducting oxide sol-gel method zinc oxide aluminum thin films |
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