AlGaInP visible resonant cavity light-emitting diodes |
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| Authors: | Lott J.A. Schneider R.P. Jr. Zolper J.C. Malloy K.J. |
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| Affiliation: | Sandia Nat. Lab., Albuquerque, NM; |
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| Abstract: | Visible (670-nm) resonant cavity light-emitting diodes (RCLEDs) composed entirely of AlGaInP alloys are discussed. The devices consist of a strained quantum well optical cavity active region surrounded by AlInP/(AlGa)InP distributed Bragg reflectors (DBRs). The bottom DBR is a 60.5 period high reflector while the top partial reflector, which determines the emission linewidth, is a five-period output coupling DBR with a reflectance of about 57%. The devices exhibit linewidths of 4.8 nm (13.3 meV) at 300 K and are promising for plastic fiber communication systems and monochromatic displays |
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