Manufacturing study of yield and performance dependence on gatelength of submicron AlInAs-GaInAs HEMTs |
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Authors: | Larson L Jelloian L Rosenbaum S Schmitz A Thompson M Lui M Nguyen L Mishra U |
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Affiliation: | Hughes Res. Lab., Malibu, CA; |
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Abstract: | The fabrication, characterization, and statistical analysis of the performance and yield of AlInAs-GaInAs on InP low-noise high electron mobility transistors (HEMTs) with subquarter-micron T-gates fabricated with electron beam lithography are reported. This was undertaken to establish the manufacturability of submicron AlInAs-GaInAs HEMT technology for various low-noise microwave receiver applications. Excellent DC device yield (up to 90%) was obtained from devices to gate widths 300 μm and 1000 μm. A range of minimum noise figures between 0.026 to 0.5 dB at 2 GHz and 0.39 to 0.8 dB at 12 GHz were obtained for 0.15-μm and 0.20-μm gate length devices. The results establish the correlation between the noise figure and yield for this new class of microwave devices |
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