Properties of (11-20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Properties of (11-20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy

Authors:	Seok Kyu HanSoon-Ku Hong Jae Wook LeeJae Goo Kim Myoungho JeongJeong Yong Lee Sun Ig HongJin Sub Park Young Eon IhmJun-Seok Ha Takafumi Yao

Affiliation:	^a Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764, Republic of Korea ^b Graduate School of Green Energy Technology, Chungnam National University, Daejeon 305-764, Republic of Korea ^c Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea ^d Department of Electronic Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea ^e School of Applied Chemical Engineering, Chonnam National University, Gwangju 505-757, Repulic of Korea ^f Center for Interdisciplinary Research, Tohoku University, Sendai 980-8587, Japan

Abstract:

Keywords:	Molecular beam epitaxy Thin film Epitaxy Zinc oxide Nonpolar Semiconductor
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