Diffusion induced grain boundary migration and recrystallization during oxidation of a Ni- 48.5 Pet Cu alloy

Diffusion induced grain boundary migration (DIGM) was observed to occur in a Ni-48.5 wt pct Cu alloy during oxidation at 450 °C, 500 °C, 600 °C, and 707 °C in air. The DIGM zones are Cu enriched. A Ni depleted zone, consisting of small recrystallized grains, formed in the matrix beneath the metal-oxide interface during oxidation at 600 °C and 707 °C. This process is referred to as oxidation-induced recrystallization (OIR). Growth of the small OIR grains was observed to be associated with Cu-rich DIGM. No Cu-rich DIGM was found in the same alloy when annealed in Ar at 707 °C. Oxidation of this alloy in air resulted in the formation of a duplex oxide: an inner NiO layer and an outer CuO layer. The NiO layer was observed to grow at a faster rate than the CuO layer. The occurrence of Cu-rich DIGM is interpreted in terms of this preferential oxidation of Ni.