| 电离辐射对Si_3N_4/SiO_2/Si双界面系统的作用 |
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| 引用本文： | 刘昶时. 电离辐射对Si_3N_4/SiO_2/Si双界面系统的作用[J]. 固体电子学研究与进展, 2006, 26(1): 16-19 |
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| 作者姓名： | 刘昶时 |
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| 作者单位： | 绍兴文理学院物理系,浙江,绍兴,312000 |
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| 基金项目： | 中国科学院资助项目 , 绍兴文理学院校科研和教改项目 |
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| 摘 要： | 采用氩离子刻蚀XPS(X光激发电子能谱)分析对S i3N4/S iO2/S i双界面系统进行了电离辐照剖面分析。实验结果表明:电离辐照能将S iO2和S i构成的界面区中心向S i3N4/S iO2界面方向推移,同时S iO2/S i界面区亦被电离辐照展宽。在同样偏置电场中辐照,随着辐照剂量的增加电离辐照相当程度地减少位于S iO2/S i界面区S i3N4态(结合能B.E.101.8 eV)S i的浓度。同时辐照中所施偏置电场对S iO2/S i界面区S i3N4态键断开有显著作用。文中就实验现象的机制进行了初步探讨。
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| 关 键 词： | X光激发电子能谱 氮化硅 二氧化硅-硅 氮化硅态的硅 剂量 偏置 |
| 文章编号： | 1000-3819(2006)01-016-04 |
| 收稿时间： | 2004-05-20 |
| 修稿时间： | 2004-09-10 |
Actions of γ-rays on Double Interface System of Si3N4/SiO2/Si |
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| LIU Changshi. Actions of γ-rays on Double Interface System of Si3N4/SiO2/Si[J]. Research & Progress of Solid State Electronics, 2006, 26(1): 16-19 |
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| Authors: | LIU Changshi |
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| Affiliation: | Department of Physics, Shaoxing College of Arts and Sciences, Shaoxing, Zhejiang, 312000, CHN |
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| Abstract: | The interfacial structures of double interface system of Si_3N_4/SiO_2/Si were examined using XPS(X-ray Photoelectron Spectroscopy)before and after~(60)Co irradiation.The experimental results demonstrate that after the Si_3N_4-SiO_2-Si samples were irradiated by~(60)Co γ-ray,the interface between SiO_2 and Si extended towards the interface of Si_3N_4/SiO_2 and the center of the former interface moved towards the interface of the latter.The concentration of silicon in the Si_3N_4 state(B.E.101.8 eV)was dropped with the increasing of dosage at-1 MV/cm bias field within the SiO_2-Si interface,remarkably.Meanwhile the effects of bias field on XPS spectra at the interface SiO_2-Si were observable.Finally,some viewpoints to explain the experimental results have been suggested. |
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| Keywords: | XPS Si3N, SiO2-S1 Si in the Si3N4 state dosage bias field |
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