| 碳注入对 Ni0.95(Pt0.05)Si热稳定性影响探究 |
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| 引用本文： | 冯帅,赵利川,张青竹,杨鹏鹏,唐兆云,闫江,吴次南. 碳注入对 Ni0.95(Pt0.05)Si热稳定性影响探究[J]. 半导体学报, 2015, 36(6): 063004-4. DOI: 10.1088/1674-4926/36/6/063004 |
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| 作者姓名： | 冯帅 赵利川 张青竹 杨鹏鹏 唐兆云 闫江 吴次南 |
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| 基金项目： | ETSOI器件与关键工艺研究 |
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| 摘 要： | 在两步快速热退火硅化之前，对硅衬底进行不同剂量的碳注入，以此探究碳对Ni0.95(Pt0.05)Si薄膜热稳定性的影响。与没有碳注入的比起来，1e15 cm-2和3e15 cm-2碳剂量注入得到的Ni0.95(Pt0.05)Si薄膜热稳定性分别被改善了100 oC和150 oC。通过方块电阻测量，XRD物相分析和SEM图像对比发现，沉淀在Ni0.95(Pt0.05)Si晶界处和Ni0.95(Pt0.05)Si/Si的界面处的碳原子是Ni0.95(Pt0.05)Si薄膜热稳定性提高的原因，而且碳的注入还在一定程度上改变了硅化反应中NiSi晶粒生长的择优取向。这些发现对Ni0.95(Pt0.05)Si:C材料的应用都将很有意义。
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| 关 键 词： | silicide thermal stability carbon implant RTA |
Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si |
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| Feng Shuai,Zhao Lichuan,Zhang Qingzhu,Yang Pengpeng,Tang Zhaoyun,Yan Jiang and Wu Cinan. Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si[J]. Chinese Journal of Semiconductors, 2015, 36(6): 063004-4. DOI: 10.1088/1674-4926/36/6/063004 |
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| Authors: | Feng Shuai Zhao Lichuan Zhang Qingzhu Yang Pengpeng Tang Zhaoyun Yan Jiang Wu Cinan |
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| Affiliation: | 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, China;College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029, China;3. College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China |
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| Abstract: | |
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| Keywords: | silicide thermal stability carbon implant RTA |
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