Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV |
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Authors: | Tanu Goyal Manoj Kumar Majumder and Brajesh Kumar Kaushik |
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Affiliation: | 1. Department of ECE, IEC College of Engineering and Technology, UP, India;2. Department of E&CE, Indian Institute of Technology Roorkee, Uttarakhand, India |
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Abstract: | Through-silicon vias (TSVs) have provided an attractive solution for three-dimensional (3D) integrated devices and circuit technologies with reduced parasitic losses and power dissipation, higher input-output (I/O) density and improved system performance. This paper investigates the propagation delay and average power dissipation of single-walled carbon nanotube bundled TSVs having different via radius and height. Depending on the physical configuration, a comprehensive and accurate analytical model of CNT bundled TSV is employed to represent the via (vertical interconnect access) line of a driver-TSV-load (DTL) system. The via radius and height are used to estimate the bundle aspect ratio (AR) and the cross-sectional area. For a fixed via height, the delay and the power dissipation are reduced up to 96.2% using a SWCNT bundled TSV with AR = 300 : 1 in comparison to AR = 6 : 1. |
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Keywords: | carbon nanotube through-silicon vias equivalent RLC circuit model propagation delay power-delay product area-delay product |
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