Control of grain size and -orientation in multi-crystalline silicon ingots

Two different cooling rates have been imposed during the early solidification of two multi-crystalline silicon ingots with 250mm diameter and 100mm height in a pilot scale directional solidification furnace. This has been done by opening a variable heat leak system below the crucible in order to achieve a high initial cooling rate in one of the ingots. The grain-structure and -orientation of these two ingots have been investigated by light microscopy (LM) and electron backscattered diffraction (EBSD), and their electrical properties by quasi-steady state photo-conductance (QSSPC) and surface photovoltage (SPV) method. The ingot with the high initial cooling rate shows predominantly grains which are significantly larger than what is usually found in mc-Si. The minority carrier diffusion lengths measured on the large grains in the ingot with high cooling rate show higher values than those measured on the ingot with smaller grains. These results indicate that principles of grain size and -orientation control in mc-Si ingots can be applied to a pilot scale furnace, and the potential for up-scaling to industrial ingots with improved electrical properties and, thus, higher solar cell conversion efficiency.