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Low temperature preparation of stabilized zirconia
Authors:M K Dongare  A P B Sinha
Affiliation:(1) Physical Chemistry Division, National Chemical Laboratory, 411 008 Poona, India
Abstract:The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in ZrO2doped with 15 per cent CaO, which at 400° C is 2.37×10−6 Ω−1 cm−1 and at 1000°C is 1.26×10−2 Ω−1 cm−1, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor.
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