Low temperature preparation of stabilized zirconia |
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Authors: | M K Dongare A P B Sinha |
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Affiliation: | (1) Physical Chemistry Division, National Chemical Laboratory, 411 008 Poona, India |
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Abstract: | The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia
takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is
found in ZrO2doped with 15 per cent CaO, which at 400° C is 2.37×10−6 Ω−1 cm−1 and at 1000°C is 1.26×10−2 Ω−1 cm−1, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method
is purely an oxygen ion conductor. |
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