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Microstructural properties of ZnO:Sn thin films deposited by intermittent spray pyrolysis process |
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| Authors: | F Kadi Allah L Cattin M Morsli A Khelil N Langlois J C Bernède |
| Affiliation: | 1. Université d’Oran Es-Senia, LPCM2E, Oran, Algérie 2. IMJR, 2 rue de la Houssinière, BP 92208, 44000, Nantes, France 3. Faculté des Sciences et des Techniques, Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, 2 rue de la Houssinière, BP 92208, 44000, Nantes, France |
| Abstract: | Zinc oxide films have been prepared via spray pyrolysis using a perfume atomizer. ZnCl2 has been used as precursor. The influence of the precursor solution and dopant concentration has been investigated. Homogeneous films are obtained with a precursor concentration ranging between 0.3 and 0.4 M and a SnCl2 dopant concentration of 1–2%. The films exhibit broad band gaps and small conductivity. The microstructural properties of these films have been compared with that of films deposited using a classical nozzle. Films deposited by perfume atomizer are rougher, with smaller grain size, compared to films deposited with a classical nozzle. |
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