| 退火温度对Ge-SiO2薄膜结构的影响 |
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| 引用本文： | 汤乃云,叶春暖,吴雪梅,诸葛兰剑,俞跃辉,姚伟国.退火温度对Ge-SiO2薄膜结构的影响[J].功能材料,2002,33(3):324-325,331. |
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| 作者姓名： | 汤乃云 叶春暖 吴雪梅 诸葛兰剑 俞跃辉 姚伟国 |
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| 作者单位： | 1. 苏州大学物理系,江苏,苏州,215006
2. 中国科学院上海冶金所,上海,200050 |
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| 基金项目： | 国家自然科学基金资助项目(69876043) |
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| 摘 要： | 用射频磁控溅射制备了Ge-SiO2薄膜，在N2的保护下对薄膜进行了不同温度的退火处理。使用傅里叶变换红外光谱分析（FTIR）技术，X射线衍射谱（XRD），X射线光电子能谱（XPS）分析样品的微结构，研究样品在退火中发生的结构，组分的变化，结果表明退火温度对薄膜的结构，尤其是薄膜中的GeO含量和GeO晶粒的大小的影响是显著的，并对其做了详尽的分析讨论。
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| 关 键 词： | 退火温度 Ge－SiO2薄膜 结构 溅射 |
| 文章编号： | 1001-9731(2002)03-0324-02 |
Influence of annealing temperature on the structure of Ge-SiO2 thin films |
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| TANG Nai yun ,YE Chun nuan ,WU Xue mei ,ZHUGE Lan jian ,YU Yao hui ,YAO Wei guo.Influence of annealing temperature on the structure of Ge-SiO2 thin films[J].Journal of Functional Materials,2002,33(3):324-325,331. |
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| Authors: | TANG Nai yun YE Chun nuan WU Xue mei ZHUGE Lan jian YU Yao hui YAO Wei guo |
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| Affiliation: | TANG Nai yun 1,YE Chun nuan 1,WU Xue mei 1,ZHUGE Lan jian 1,YU Yao hui 2,YAO Wei guo 1 |
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| Abstract: | Ge SiO 2 thin films were deposited on p type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge SiO 2 composite target. Thermal annealing was performed in a controlled N 2 ambience at different temperature. The microstructure was studied by XRD,XPS and FTIR. It was showed that the amount of the GeO and the average size of the Ge nanocrystals was dependent on annealing temperature. And the detail was discussed. |
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| Keywords: | Ge SiO 2 thin films sputtering annealing temperature |
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