| 覆有BST膜的半导体功率器件结终端研究 |
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| 引用本文： | 葛微微,张国俊,钟志亲,王姝娅,戴丽萍.覆有BST膜的半导体功率器件结终端研究[J].电子元件与材料,2012,31(12):46-48. |
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| 作者姓名： | 葛微微 张国俊 钟志亲 王姝娅 戴丽萍 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054 |
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| 基金项目： | 中央高校基本科研业务费专项基金资助项目(No.ZYGX2011J029) |
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| 摘 要： | 通过一系列的工艺步骤,在半导体功率器件含有场限环(FLR)的结终端上覆盖了一层300 nm厚、介电常数高的钛酸锶钡( BST)膜.对该新型结终端和无BST膜的传统FLR结终端的结构与性能进行了研究比较.结果表明,在覆盖BST膜后,FRL结终端的结构击穿电压提高了50％.这证明BST膜能够提高器件的击穿电压.
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| 关 键 词： | 半导体功率器件 钛酸锶钡(BST)膜 结终端 场限环 |
Study on the BST film covered junction terminal of power semiconductor devices |
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| GE Weiwei,ZHANG Guojun,ZHONG Zhiqin,WANG Shuya,DAI Liping.Study on the BST film covered junction terminal of power semiconductor devices[J].Electronic Components & Materials,2012,31(12):46-48. |
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| Authors: | GE Weiwei ZHANG Guojun ZHONG Zhiqin WANG Shuya DAI Liping |
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| Affiliation: | (State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | A layer of 300 nm thick barium strontium titanate(BST) film with high permittivity was deposited on the junction terminal,with a field limiting ring(FLR) structure,of power semiconductor devices via a series of procedures.The structure and properties of the FRL junction terminals with and without BST film were studied and compared.The results show that the breakdown voltage of the junction terminal with BST film is 50% higher than that of the junction terminal without BST film.This indicates that BST film can increase the breakdown voltage of devices. |
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| Keywords: | power semiconductor device barium strontium titanate(BST) film junction terminal field limiting ring |
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