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基于PIN管的多路大功率宽带高线性射频开关的研制
引用本文:张光辉,石玉,何泽涛.基于PIN管的多路大功率宽带高线性射频开关的研制[J].电子元件与材料,2012(11):59-62.
作者姓名:张光辉  石玉  何泽涛
作者单位:电子科技大学微电子与固体电子学院
摘    要:设计制作了一款工作于100~400MHz的大功率宽带高线性单刀多掷PIN管收发开关。该开关采用1分6再分6的串联型结构,通过对PIN管的选取和微带线布局来实现对开关插损、隔离度和驻波比的要求。由于采用串联结构而非串并结构,该开关驱动部分大为简化。测试结果表明,该开关插损小于0.3 dB,隔离度大于50 dB,驻波比小于1.2,功率容量为100 W,二次谐波抑制大于70 dBc。

关 键 词:PIN管开关  宽带  功率容量  线性

Development of multi-channel high-power broadband high linearity RF switch based on PIN diode
ZHANG Guanghui,SHI Yu,HE Zetao.Development of multi-channel high-power broadband high linearity RF switch based on PIN diode[J].Electronic Components & Materials,2012(11):59-62.
Authors:ZHANG Guanghui  SHI Yu  HE Zetao
Affiliation:(School of Microelectronics and Solid Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China)
Abstract:A high-power,high-linear,broadband single pole multi throw PIN diode RF switch working at 100-400 MHz was designed and fabricated.The switch used a 6×6 structure,which can meet the requirements of the insertion loss,isolation and VSWR with picking the right PIN diodes and rational distribution of microstrip lines.The drive portion of the switch was greatly simplified due to using the series structure instead of the series-parallel structure.Test results show that the insertion loss <0.3 dB,the isolation>50 dB,VSWR<1.2,the power capacity = 100 W,the second harmonic suppression > 70 dBc.
Keywords:PIN diode switch  broadband  power capacity  linear
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