| 脉冲激光背照射单粒子效应实验研究 |
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| 引用本文： | 王德坤,曹洲,刘海南,杨献.脉冲激光背照射单粒子效应实验研究[J].原子能科学技术,2011,45(7):884-887. |
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| 作者姓名： | 王德坤 曹洲 刘海南 杨献 |
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| 作者单位： | 1.兰州空间技术物理研究所 ;真空低温技术与物理国家级重点实验室，甘肃 ;兰州730000；2.中国科学院 ;微电子研究所，北京100029 |
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| 摘 要： | 为避免集成电路正面金属层对激光的阻挡，采用背面照射的方法对非加固SRAMIL-2和加固SRAM1020-2进行了单粒子效应实验。对脉冲激光背面照射实验的相关问题进行了探讨。比较了两种器件产生单个位翻转的有效激光阈值能量，验证了器件加固措施的有效性。
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| 关 键 词： | 单粒子效应 SRAM 背面辐照 脉冲激光 抗辐射加固 |
Backside Pluse Laser Testing for Single Event Effect |
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| WANG De-kun,CAO Zhou,LIU Hai-nan,YANG Xian.Backside Pluse Laser Testing for Single Event Effect[J].Atomic Energy Science and Technology,2011,45(7):884-887. |
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| Authors: | WANG De-kun CAO Zhou LIU Hai-nan YANG Xian |
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| Affiliation: | 1.National Key Lab of Vacuum & Cryogenics Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China; 2.Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | To deal with the increasing metal layers in the front side of integrated circuit,the backside single event effects laser testing method based on the experimental results of the unhardened SRAM IL-2 and the hardened SRAM 1020-2 was presented.The problems that involved backside laser testing were discussed.The hardened validity was obtained by comparing the effective energy threshold between both samples. |
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| Keywords: | single event effect SRAM irradiation from the backside pulse laser radiation hardened |
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