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Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride |
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| Authors: | Sennikov P. G. Golubev S. V. Shashkin V. I. Pryakhin D. A. Drozdov M. N. Andreev B. A. Drozdov Yu. N. Kuznetsov A. S. Pohl H. -J. |
| Affiliation: | (1) Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) Institute of Applied Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(3) Institute for Physics of Microstructures, Nizhni Novgorod, 603950, Russia;(4) Astor, Inc., Kuz’molovskii village, Leningrad oblast, 188663, Russia;(5) VITCON Projectconsult GmbH, Jena, D-07743, Germany |
| Abstract: | Semiconductors - The data on fabrication of silicon layers on various substrates by plasma enhanced chemical vapor deposition from the (silicon tetrafluoride)-hydrogen system are reported. The... |
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