Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface |
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| Authors: | O. V. Pyatilova A. V. Sysa S. A. Gavrilov L. V. Yakimova A. A. Pavlov A. N. Belov A. A. Raskin |
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| Affiliation: | 1.National Research University of Electronic Technology,Moscow,Russia;2.Institute of Nanotechnology Microelectronics,Russian Academy of Sciences,Moscow,Russia |
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| Abstract: | The specific features of fabrication of 3D silicon structures via local formation of a sacrificial porous silicon layer by metal-assisted chemical etching with 50- and 100-nm-thick silver films as a catalyst are studied. It is found that the mass transfer of Ag+ ions, caused by the temperature gradient, affects the surface morphology of the structure being formed, depending on the linear size of the mask-catalyst. |
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