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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
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| Authors: | I. V. Shtrom A. D. Bouravleuv Yu. B. Samsonenko A. I. Khrebtov I. P. Soshnikov R. R. Reznik G. E. Cirlin V. Dhaka A. Perros H. Lipsanen |
| Affiliation: | 1.Ioffe Physical–Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.St. Petersburg National Research Academic University—Nanotechnology Research and Education Center,Russian Academy of Sciences,St. Petersburg,Russia;3.Institute of Analytical Instrumentation,Russian Academy of Sciences,St. Petersburg,Russia;4.St. Petersburg National Research University of Information Technologies, Mechanics, and Optics,St. Petersburg,Russia;5.Aalto University,Espoo,Finland;6.St. Petersburg State Polytechnic University,St. Petersburg,Russia |
| Abstract: | It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer. |
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