Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures |
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| Authors: | S. V. Gudina Yu. G. Arapov A. P. Saveliev V. N. Neverov S. M. Podgornykh N. G. Shelushinina M. V. Yakunin I. S. Vasil’evskii A. N. Vinichenko |
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| Affiliation: | 1.Mikheev Institute of Metal Physics, Ural Branch,Russian Academy of Sciences,Yekaterinburg,Russia;2.Yeltsin Ural Federal University,Yekaterinburg,Russia;3.National Research Nuclear University MEPhI,Moscow,Russia |
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| Abstract: | The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent. |
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