Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account |
| |
Authors: | E S Obolenskaya E A Tarasova A Yu Churin S V Obolensky V A Kozlov |
| |
Affiliation: | 1.Lobachevsky State University of Nizhny Novgorod (NNSU),Nizhny Novgorod,Russia;2.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhny Novgorod,Russia |
| |
Abstract: | Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically and experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|