| SnO2纳米线的低温生长及光致发光研究 |
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| 引用本文： | 王冰,徐平,杨国伟.SnO2纳米线的低温生长及光致发光研究[J].半导体学报,2008,29(8). |
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| 作者姓名： | 王冰 徐平 杨国伟 |
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| 作者单位： | 1. 深圳大学电子科学与技术学院,深圳微纳光子信息技术重点实验室,深圳,518060
2. 中山大学光电材料与技术国家重点实验室,广州,510275 |
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| 基金项目： | 深圳大学校科研和教改项目 |
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| 摘 要： | 在550℃下,通过Au-Ag合金助催热蒸发氧化亚锡,制备了25nm的Sn02纳米线.测试了Sn02纳米线的室温光致发光谱,其四个发光峰中,418nm的峰足新发现的峰,它是孪晶纳米线的面缺陷造成的.SnO2纳米线的低温生长机制遵从VLS生长机制,且与5nO粉末的应用有一定的关系.Sn02纳米线的较小尺度与气相因子的低温度低浓度化学反应有关.
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| 关 键 词： | 晶体生长 纳米材料 形貌 光致发光 |
Low-Temperature Growth and Photoluminescence of SnO2 Nanowires |
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| Wang Bing,Xu Ping,Yang Guowei.Low-Temperature Growth and Photoluminescence of SnO2 Nanowires[J].Chinese Journal of Semiconductors,2008,29(8). |
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| Authors: | Wang Bing Xu Ping Yang Guowei |
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| Abstract: | SnO2 nanowires with a diameter of 25nm are synthesized at 550℃ by Au-Ag catalyst assisted thermal evapora-tion of SnO powders.The room-temperature photoluminescence spectra (PL) of the prepared nanowires are measured.Among the four PL peaks,the peak of 418nm is newly observed.This peak is caused by the plane defects of the twinned crystal nanowires.The formation of SnO2 nanowires at low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO.We suggest that the chemical reactions of the low temperature and low concen-tration of the vaporized species are responsible for the thinner size of the SnO2 nanowires. |
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| Keywords: | crystal growth nanomaterials morphology photoluminescence |
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