| 背照式ZnO紫外焦平面成像阵列制作的刻蚀研究 |
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| 引用本文： | 高群,张景文,侯洵. 背照式ZnO紫外焦平面成像阵列制作的刻蚀研究[J]. 半导体学报, 2008, 29(12): 2304-2306 |
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| 作者姓名： | 高群 张景文 侯洵 |
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| 作者单位： | 西安交通大学电子科学与工程系,西安,710049 |
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| 摘 要： | 研究了背照式ZnO焦平面成像阵列制作的刻蚀工艺.该ZnO焦平面阵列为128×128阵列,每个单元面积为25μm × 25μm,对该阵列的刻蚀结果进行了研究分析.刻蚀后阵列单元的剖面角约为80°.在刻蚀过程中,刻蚀深度和刻蚀时间呈线性关系.还研究了NH4Cl溶液浓度和刻蚀速率之间的关系.时刻蚀后的阵列单元进行了光电响应的测试,得到明暗电流比约为60:1.
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| 关 键 词： | 刻蚀 NH4Cl 焦平面阵列 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-07-08 |
Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers |
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| Gao Qun, Zhang Jingwen, Hou Xun. Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers[J]. Journal of Semiconductors, 2008, In Press. Gao Q, Zhang J W, Hou X. Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers[J]. J. Semicond., 2008, 29(12): 2304.Export: BibTex EndNote |
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| Authors: | Gao Qun Zhang Jingwen Hou Xun |
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| Affiliation: | Department of Electronic Science and Technology,Xi'an Jiaotong University,Xi'an 710049,China;Department of Electronic Science and Technology,Xi'an Jiaotong University,Xi'an 710049,China;Department of Electronic Science and Technology,Xi'an Jiaotong University,Xi'an 710049,China |
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| Abstract: | Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated. The etching result of 128 × 128 array,in which the area of unit cell was 25μm v 25μm,was studied. The profile angle was approximately 80°. There was a linear relationship between the etching depth and the etching time. The dependence of etching rate on NH4 Cl solution concentration was also studied. The photoresponsivity of the array's unit cells was measured. The UV-tovisible rejection ratio was around 60 : 1. |
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| Keywords: | etching NH4Cl focal plane array |
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