| 应用于THz辐射的ZnTe单晶生长及测试 |
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| 引用本文： | 王仍,方维政,赵培,张雷,葛进,袁诗鑫,张惠尔,胡淑红,戴宁,陈晓姝,吴晓君,何山,王钢. 应用于THz辐射的ZnTe单晶生长及测试[J]. 半导体学报, 2008, 29(5): 940-943 |
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| 作者姓名： | 王仍 方维政 赵培 张雷 葛进 袁诗鑫 张惠尔 胡淑红 戴宁 陈晓姝 吴晓君 何山 王钢 |
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| 作者单位： | 1. 中国科学院上海技术物理所,红外国家重点实验室,上海,200083
2. 中山大学光电材料与技术国家重点实验室,广州,510275 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，上海市应用材料研究与发展项目 |
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| 摘 要： | 利用Te溶剂方法生长出ZnTe单晶.经X射线衍射测试,发现晶锭中存在沿(110)晶向生长的大晶粒,可以切出10mm×10mm的单晶片.傅里叶红外变换光谱仪测得ZnTe晶体在2.5～20μm波段的红外透过率约为61%.通过测可见-红外波段的透射光谱,得出禁带宽度为2.24eV.利用飞秒激光作用在一块ZnTe单晶同时产生-探测THz脉冲,观察到0.18ps的THz辐射场分布,相应的频谱分布为5THz.
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| 关 键 词： | Te溶剂方法 ZnTe单晶 XRD THz |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-11-02 |
Growth and Characteristics of ZnTe Single Crystal for THz Technology |
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| Wang Reng, Fang Weizheng, Zhao Pei, Zhang Lei, Ge Jin, Yuan Shixin, Zhang Huier, Hu Shuhong, Dai Ning, Chen Xiaoshu, Wu Xiaojun, He Shan, Wang Gang. Growth and Characteristics of ZnTe Single Crystal for THz Technology[J]. Journal of Semiconductors, 2008, In Press. Wang R, Fang W Z, Zhao P, Zhang L, Ge J, Yuan S X, Zhang H E, Hu S H, Dai N, Chen X S, Wu X J, He S, Wang G. Growth and Characteristics of ZnTe Single Crystal for THz Technology[J]. J. Semicond., 2008, 29(5): 940.Export: BibTex EndNote |
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| Authors: | Wang Reng Fang Weizheng Zhao Pei Zhang Lei Ge Jin Yuan Shixin Zhang Huier Hu Shuhong Dai Ning Chen Xiaoshu Wu Xiaojun He Shan Wang Gang |
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| Affiliation: | National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China |
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| Abstract: | ZnTe single crystals were grown perfectly by employing the Te-solution method.X-ray diffraction was introduced to investigate the crystals,and 〈110〉 oriented crystals of 10mm×10mm size were obtained.The transmittance is about 61% in range of 2.5 ~20mm,as measured with a Fourier Transform Infrared spectrometer.The visible and near-infrared spectrum show that the ZnTe band-gap is about 2.24eV.Moreover,a THz pulse was emitted and detected on a ZnTe single crystal by means of a femto-second Ti:sapphire amplifier system.The THz radiation signal has a pulse width of about 0.18ps and frequency bandwidth of 5THz. |
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| Keywords: | Te-solution method ZnTe crystal X-ray diffraction THz |
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