| 6H-SiC衬底上异质外延3C-SiC薄膜的结构研究 |
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| 引用本文： | 林涛,李青民,李连碧,杨莺,陈治明. 6H-SiC衬底上异质外延3C-SiC薄膜的结构研究[J]. 半导体学报, 2008, 29(5): 936-939 |
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| 作者姓名： | 林涛 李青民 李连碧 杨莺 陈治明 |
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| 作者单位： | 西安理工大学电子工程系,西安,710048 |
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| 基金项目： | 国家自然科学基金，教育部高等学校博士学科点专项科研基金，中国博士后科学基金 |
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| 摘 要： | 以SiH4和C3H8为反应源,在1250℃下,采用低压热壁化学气相淀积法在6H-SiC衬底上异质外延生长了3C-siC薄膜.扫描电镜和原子力显微镜测试结果显示,样品表面光滑、无明显岛状结构物质.剖面透射电镜照片显示SiC外延层致密均匀、界面平整,厚度约为50nm.高分辨透射电镜结果显示,衬底与外延层分别为排列整齐的6H-SiC结构和3C-SiC结构,两者过渡平坦、界面处无其他晶型.选区电子衍射花样标定结果再次说明外延薄膜为闪锌矿结构的3C-SiC,计算的晶格常数为0.4362nm.
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| 关 键 词： | 碳化硅 化学气相沉积 异质外延 透射电子显微镜 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-01-20 |
A Structural Investigation of 3C-SiC Film Hetero-Epitaxial Grown on 6H-SiC Substrate |
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| Lin Tao, Li Qingmin, Li Lianbi, Yang Ying, Chen Zhiming. A Structural Investigation of 3C-SiC Film Hetero-Epitaxial Grown on 6H-SiC Substrate[J]. Journal of Semiconductors, 2008, In Press. Lin T, Li Q M, Li L B, Yang Y, Chen Z M. A Structural Investigation of 3C-SiC Film Hetero-Epitaxial Grown on 6H-SiC Substrate[J]. J. Semicond., 2008, 29(5): 936.Export: BibTex EndNote |
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| Authors: | Lin Tao Li Qingmin Li Lianbi Yang Ying Chen Zhiming |
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| Affiliation: | Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China |
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| Abstract: | 3C-SiC film was hetero-epitaxial grown on 6H-SiC substrate by the low temperature hot wall chemical vapor deposition method at 1250℃,using SiH4 and C3H8 as gas sources.Results of scanning electron microscopy and atomic force microscopy show that the sample's surface is smooth without a visible island structure.The image of the cross-section transmission electron microscopy shows that the compact and uniform SiC epi-layer has a flat interface,and its thickness is about 50nm.High-resolution transmission electron microscopy shows that the substrate and epi-layer are well-arranged 6H-SiC and 3C-SiC structures,respectively,with a smooth transition and no polytype in the junction.The selected area electron diffraction pattern also shows that the epi-layer is 3C-SiC film with a zinc blende structure,and the calculated lattice constant is 0.4362nm. |
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| Keywords: | SiC chemical vapour deposition hetero-epitaxial transmission electron microscopy |
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