| 多晶硅薄膜热膨胀系数的电测试结构 |
| |
| 引用本文： | 胡冬梅,黄庆安,李伟华. 多晶硅薄膜热膨胀系数的电测试结构[J]. 半导体学报, 2008, 29(10): 2018-2022 |
| |
| 作者姓名： | 胡冬梅 黄庆安 李伟华 |
| |
| 作者单位： | 东南大学MEMS教育部重点实验室,南京,210096 |
| |
| 基金项目： | 国家高技术研究发展计划(863计划) |
| |
| 摘 要： | 提出了一种新型多晶硅薄膜热膨胀系数的电测试结构,给出了热机电耦合模型和测试方法,并利用Coventor软件和ANSYS软件进行模拟和验证.分析表明模拟结果和理论结果基本一致,从而验证了该模型.该方法能够实现多晶硅薄膜热膨胀系数的在线提取,测量方便,独立性较高,以电学量形式输出,对于薄膜热膨胀系数的在线检测有一定参考价值.
|
| 关 键 词： | 热膨胀系数 多晶硅薄膜 电测试 吸合 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-05-12 |
Structure for Electrical Measurement of the Thermal Expansion Coefficient of Polysilicon Thin Films |
| |
| Hu Dongmei, Huang Qing'an, Li Weihua. Structure for Electrical Measurement of the Thermal Expansion Coefficient of Polysilicon Thin Films[J]. Journal of Semiconductors, 2008, In Press. Hu D M, Huang Q, Li W H. Structure for Electrical Measurement of the Thermal Expansion Coefficient of Polysilicon Thin Films[J]. J. Semicond., 2008, 29(10): 2018.Export: BibTex EndNote |
| |
| Authors: | Hu Dongmei Huang Qing'an Li Weihua |
| |
| Affiliation: | Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China;Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China;Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China |
| |
| Abstract: | A novel method for electrically measuring the thermal expansion coefficient of polysilicon thin films is presented.A thermal-electro-mechanical compliant model of the polysilicon thin film is established.Finite element software Coventor and ANSYS are used to verify this method.This method is convenient,and its output is in the form of an electrical signal.Thus,it is valuable for in-situ measuring the thermal expansion coefficient of polysilicon thin films |
| |
| Keywords: | thermal expansion coefficient polysilicon thin films electrical measurement pull-in |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
