| (101)面生长双轴应变Si带边模型 |
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| 引用本文： | 宋建军,张鹤鸣,戴显英,胡辉勇,宣荣喜. (101)面生长双轴应变Si带边模型[J]. 半导体学报, 2008, 29(9): 1670-1673 |
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| 作者姓名： | 宋建军 张鹤鸣 戴显英 胡辉勇 宣荣喜 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 摘 要： | 采用结合形变势理论的k·p微扰法建立了(101)面弛豫Si1-xGex衬底上生长的双轴应变Si的带边模型.结果表明:[001],[001],[100]及[100]方向能谷构成了该应变Si的导带带边,其能量值随Ge组分的增加而增加;导带劈裂能与Ge组分成正比例线性关系;价带三个带边能级都随Ge组分的增加而增加,而且Ge组分越高价带带边劈裂能值越大;禁带宽度随着Ge组分的增加而变小.该模型可获得量化的数据,为器件研究设计提供有价值的参考.
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| 关 键 词： | 应变Si 带边 k·p法 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-05-05 |
Band Edge Model of (101)-Biaxial Strained Si |
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| Song Jianjun, Zhang Heming, Dai Xianying, Hu Huiyong, Xuan Rongxi. Band Edge Model of (101)-Biaxial Strained Si[J]. Journal of Semiconductors, 2008, In Press. Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X. Band Edge Model of (101)-Biaxial Strained Si[J]. J. Semicond., 2008, 29(9): 1670.Export: BibTex EndNote |
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| Authors: | Song Jianjun Zhang Heming Dai Xianying Hu Huiyong Xuan Rongxi |
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| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China |
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| Abstract: | A band edge model in (101)-biaxial strained Si on relaxed Si1-xGex alloy, or monoclinic Si (m-Si),is presented using the k · p perturbation method coupled with deformation potential theory. Results show that the [001], [001], [100] ,[100] valleys constitute the conduction band (CB) edge, which moves up in electron energy as the Ge fraction (x) increases. Furthermore, the CB splitting energy is in direct proportion to x and all the valence band (VB) edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy as x increases are found. The quantitative data from the models supply valuable references for the design of the devices. |
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| Keywords: | strained Si band edge k· p method |
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