| 用MOCVD方法在GaAs衬底上低温生长ZnO薄膜 |
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| 引用本文： | 史慧玲,马骁宇,胡理科,崇峰. 用MOCVD方法在GaAs衬底上低温生长ZnO薄膜[J]. 半导体学报, 2008, 29(1): 12-16 |
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| 作者姓名： | 史慧玲 马骁宇 胡理科 崇峰 |
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| 作者单位： | 中国科学院半导体研究所,光电子器件国家研究中心,北京,100083 |
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| 摘 要： | 采用二乙基锌(DEZn)和水(H2O)作为生长源,利用金属有机化学气相沉积(MOCVD)的方法,在100～400℃低温范围内,在GaAs(001)衬底上制备了ZnO薄膜.利用X射线衍射(XRD),室温PL,AFM,SEM研究了薄膜的晶体结构特性、发光特性及表面形貌特性.XRD分析表明ZnO薄膜具有很强的c轴取向,(002)峰的FWHM平均值为0.3°.当生长温度达到400℃时从SEM测量结果可以观察到薄膜表面呈六角状结晶.随着生长温度的升高,薄膜的晶粒尺寸变大,结晶质量得到提高但同时表面变粗糙.室温PL测量显示薄膜在370nm附近有强的近带边发射,没有观测到深能级发射峰.
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| 关 键 词： | MOCVD ZnO薄膜 GaAs 低温 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-09-10 |
Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition |
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| Shi Huiling, Ma Xiaoyu, Hu Like, Chong Feng. Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition[J]. Journal of Semiconductors, 2008, In Press. Shi H L, Ma X Y, Hu L K, Chong F. Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition[J]. J. Semicond., 2008, 29(1): 12.Export: BibTex EndNote |
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| Authors: | Shi Huiling Ma Xiaoyu Hu Like Chong Feng |
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| Affiliation: | National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | ZnO thin films were grown on GaAs (001) substrates by metal-organic chemical vapor deposition (MOCVD) at low temperatures ranging from 100 to 400℃. DEZn and H2O were used as the zinc precursor and oxygen precursor,respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement (XRD) results indicated that all the thin films were grown with highly caxis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy (SEM) image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge (3.33eV) emissions with little or no deep-level emission related to defects. |
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| Keywords: | metal-organic chemical vapor deposition ZnO film GaAs low-temperature |
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