| 基于共振隧穿二极管的应力检测方法 |
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| 引用本文： | 熊继军,毛海央,张文栋,薛晨阳. 基于共振隧穿二极管的应力检测方法[J]. 半导体学报, 2008, 29(2): 324-328 |
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| 作者姓名： | 熊继军 毛海央 张文栋 薛晨阳 |
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| 作者单位： | 1. 中北大学仪器科学与动态测试教育部重点实验室,电子测试技术国防重点实验室,太原,030051
2. 中北大学仪器科学与动态测试教育部重点实验室,电子测试技术国防重点实验室,太原,030051;北京大学微电子研究所,北京,100871 |
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| 基金项目： | 国家自然科学基金，霍英东教育基金，教育部跨世纪优秀人才培养计划 |
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| 摘 要： | 共振隧穿二极管(RTD)具有微分负阻效应,且其共振隧穿的I-V特性随着廊力的变化而变化,这就是RTD的压阻效应.与半导体材料压阻效应的应用类似,RTD也可用于应力检测.文中研究了两种基于RTD的应力检测方法.在讨论频率-应力检测法的基础上提出了一种新颖的应力检测方法--惠斯通RTD电桥检测法.测试结果表明,基于惠斯通RTD电桥检测法得到的压阻灵敏度随偏置电压可调,町调范围达到三个数量级.
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| 关 键 词： | 共振隧穿二极管 应力检测 振荡频率 I-V特性 压阻灵敏度 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-10-16 |
Resonant Tunneling Diode Based Stress Measurement |
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| Xiong Jijun, Mao Haiyang, Zhang Wendong, Xue Chenyang. Resonant Tunneling Diode Based Stress Measurement[J]. Journal of Semiconductors, 2008, In Press. Xiong J J, Mao H Y, Zhang W D, Xue C Y. Resonant Tunneling Diode Based Stress Measurement[J]. J. Semicond., 2008, 29(2): 324.Export: BibTex EndNote |
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| Authors: | Xiong Jijun Mao Haiyang Zhang Wendong Xue Chenyang |
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| Affiliation: | Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China;Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China;Institute of Microelectronics, Pe;Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China;Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education,Key Laboratory of the Electronic Measurement Technology of the National Defense,North University of China, Taiyuan 030051, China |
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| Abstract: | The output characteristics of InGaAs/AlAs resonant tunneling diodes (RTDs) changes as a function of external stress, and this meso-piezoresistive effect can be used to measure stress.In this paper, two RTD-based strategies to measure stress, resonance frequency measurement and RTD-Wheatstone bridge measurement, are discussed.The experimental results show that the piezoresistive sensitivity of the RTD-Wheatstone bridge can be configured within a range of 3 orders with different bias voltages, and the maximum piezoresistive sensitivity is 4.782e-9Pa-1. |
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| Keywords: | current-voltage characteristic oscillation frequency piezoresistive sensitivity resonant tunneling diode stress measurement |
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