| 一种用于便携式射频识别阅读器的CMOS功率放大器 |
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| 引用本文： | 高同强,张春,池保勇,王志华. 一种用于便携式射频识别阅读器的CMOS功率放大器[J]. 半导体学报, 2008, 29(6): 1044-1047 |
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| 作者姓名： | 高同强 张春 池保勇 王志华 |
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| 作者单位： | 1. 清华大学电子工程系,北京,100084
2. 清华大学微电子学研究所,北京,100084 |
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| 摘 要： | 针对一种特定的射频识别技术的通讯协议(ISO1800-6B),提出了一种应用于射频识别读写器中的发射机前端结构,以实现发射信号的OOK调制.采用0.18μm CMOS工艺实现的这种高效率、高度集成的无线发射机前端由射频信号调制器、E类功率放大器以及相应的逻辑控制单元组成,其中的功率放大器的小信号增益约为23dB,其1dB压缩点输出功率为17.6dBm,最大输出功率为19.0dBm,而最大功率增加效率为35.4%.整个发射机的输出信号满足相应协议的特定要求,可以实现不同调制深度(18%和100%)的射频信号输出.
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| 关 键 词： | CMOS 功率放大器 射频识别 发射机 调制深度 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-01-14 |
A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers |
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| Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers[J]. Journal of Semiconductors, 2008, In Press. Gao T Q, Zhang C, Chi B Y, Wang Z H. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers[J]. J. Semicond., 2008, 29(6): 1044.Export: BibTex EndNote |
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| Authors: | Gao Tongqiang Zhang Chun Chi Baoyong Wang Zhihua |
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| Affiliation: | Department of Electronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100084,China |
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| Abstract: | Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modula-tion is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier (PA),a modula-tor, and a control logic unit. The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution. A novel structure is proposed to provide the modulation depth of 100% and 18% ,respectively. The PA presents an output 1dB power of 17.6dBm while maintaining a maximum PAE of 35.4%. |
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| Keywords: | CMOS power amplifier RFID transmitter modulation depth |
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