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一种适用于ISFET读出的高精度CMOS运放设计
引用本文:张翀,杨海钢,魏金宝.一种适用于ISFET读出的高精度CMOS运放设计[J].半导体学报,2008,29(4).
作者姓名:张翀  杨海钢  魏金宝
作者单位:1. 中国科学院电子学研究所,北京,100190;中国科学院研究生院,北京,100049
2. 中国科学院电子学研究所,北京,100190
3. 中国科学院电子学研究所,北京,100190;北京恒泰技术有限公司,北京,100016
摘    要:介绍了一种适用于ISFET读出的高精度CMOS运放设计.该运放可为ISFET提供恒定电流、电压偏置,从而便于构建读出电路并于微传感器单片集成.通过运用连续时间自调零技术,大大降低了运放的失调电压、1/f,噪声和温漂等低频噪声.该设计基于0.35/μm CMOS工艺,电源电压3.3V,运放的开环增益超过100dB,输入等效失调电压低至11/μV,总功耗仅为1.48mW.应用该运放实现的pH微传感器已通过实验验证.

关 键 词:高精度  自调零  运算放大器  ISFET微传感器

A High Precision CMOS Opamp Suitable for ISFET Readout
Zhang Chong,Yang Haigang,Wei Jinbao.A High Precision CMOS Opamp Suitable for ISFET Readout[J].Chinese Journal of Semiconductors,2008,29(4).
Authors:Zhang Chong  Yang Haigang  Wei Jinbao
Abstract:This paper presents a high precision CMOS opamp suitable for ISFET readout. The opamp is tailored to provide a constant bias condition for ISFET as part of the readout circuits and, hence,is compatible for single chip integration with the sensor. A continuous time auto-zero stabilization technique is studied and employed, with the aim of suppressing the low frequency noises, including the offset voltage, 1/f noise, and temperature drift. The design is based on a 0.35μm CMOS process. With a 3.3V power supply,it maintains a DC open loop gain of more than 100dB and an offset voltage of around 11μV,while the overall power dissipation is only 1.48mW. With this opamp, a pH microsensor is constructed, of which the functionality is verified by experimental tests.
Keywords:high precision  auto-zero  operational amplifier  ISFET microsensor
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