| P型张应变Si/SiGe量子阱红外探测器的能带设计 |
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| 引用本文： | 邓和清,林桂江,赖虹凯,李成,陈松岩,余金中. P型张应变Si/SiGe量子阱红外探测器的能带设计[J]. 半导体学报, 2008, 29(4): 785-788 |
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| 作者姓名： | 邓和清 林桂江 赖虹凯 李成 陈松岩 余金中 |
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| 作者单位： | 1. 厦门大学物理系,厦门大学半导体光子学研究中心,厦门,361005
2. 厦门大学物理系,厦门大学半导体光子学研究中心,厦门,361005;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(973计划) |
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| 摘 要： | 提出P型张应变Si/SiGe量子阱红外探测器(QWIP)结构,应用k·P方法计算应变Si/SiGe量子阱价带能带结构和应变SiGe合金空穴有效质量.结果表明量子阱中引入张应变使轻重空穴反转,基态为有效质量较小的轻空穴态,因此P型张应变Si/SiGe QWIP与n型QWIP相比具有更低的暗电流;而与P型压应变或无应变QWIP相比光吸收和载流子输运特性具有较好改善.在此基础上讨论了束缚态到准束缚态子带跃迁型张应变p-Si/SiGe QWIP的优化设计.
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| 关 键 词： | 张应变 锗硅量子阱 红外探测器 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-11-11 |
An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors |
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| Deng Heqing, Lin Guijiang, Lai Hongkai, Li Cheng, Chen Songyan, Yu Jinzhong. An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors[J]. Journal of Semiconductors, 2008, In Press. Deng H Q, Lin G J, Lai H K, Li C, Chen S Y, Yu J Z. An Energy Band Design for p-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors[J]. J. Semicond., 2008, 29(4): 785.Export: BibTex EndNote |
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| Authors: | Deng Heqing Lin Guijiang Lai Hongkai Li Cheng Chen Songyan Yu Jinzhong |
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| Affiliation: | Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China |
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| Abstract: | Quantum well infrared photodetectors (QWIPs) offer numerous potential applications for defense,industry,and medicine.A novel p-type tensile strained Si/SiGe QWIP is proposed in this paper.The valence band structure of the strained Si/SiGe quantum well and hole effective mass of the strained SiGe alloy are calculated using the k·p method.When tensile strain is induced in the quantum wells,the light-hole state with small effective mass becomes the ground state,which is expected to have lower dark current than n-type QWIPs and also have larger absorption coefficient and better transport characteristics than conventional unstrained or compressive strained p-type QWIPs.Designs for p-type tensile strained Si/SiGe QWIP based on the bound-to-quasi-bound transitions are also discussed. |
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| Keywords: | tensile strained layer Si/SiGe quantum well infrared detector |
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