| 掺Sb的ZnO单晶的缺陷和性质研究 |
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| 引用本文： | 张瑞,张瑶,赵有文,董志远,杨俊. 掺Sb的ZnO单晶的缺陷和性质研究[J]. 半导体学报, 2008, 29(10): 1988-1991 |
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| 作者姓名： | 张瑞 张瑶 赵有文 董志远 杨俊 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 采用化学气相传输法生长了掺Sb的ZnO体单晶,生长温度为950℃.与非掺ZnO单品相比,掺Sb后ZnO单晶仍为n型,其自由电子浓度明显升高.x射线光电子能谱(XPS)测量结果表明.掺人的Sb在ZnO单晶中可能占据了Zn位,或处于间隙化置,形成了施主.利用光致发光谱(PL)测量发现掺Sb后ZnO单晶发出蓝光,该蓝色荧光与浅施主有关.这些结果表明在高温生长条件下,掺Sb后ZnO单晶中产生了高浓度的施主缺陷,因而难以获得P型材料.
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| 关 键 词： | ZnO 单晶 掺杂 缺陷 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-04-24 |
Defects and Properties of Antimony-Doped ZnO Single Crystal |
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| Zhang Rui, Zhang Fan, Zhao Youwen, Dong Zhiyuan, Yang Jun. Defects and Properties of Antimony-Doped ZnO Single Crystal[J]. Journal of Semiconductors, 2008, In Press. Zhang R, Zhang F, Zhao Y W, Dong Z Y, Yang J. Defects and Properties of Antimony-Doped ZnO Single Crystal[J]. J. Semicond., 2008, 29(10): 1988.Export: BibTex EndNote |
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| Authors: | Zhang Rui Zhang Fan Zhao Youwen Dong Zhiyuan Yang Jun |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | Sb-doped ZnO single crystal has been grown at 950℃ by the chemical vapor transport method.Compared to undoped ZnO,the Sb-doped ZnO single crystal is still n-type with an apparent increase of free electron concentration.X-ray photoelectron spectroscopy (XPS) measurement results suggest a possible occupation of the Zn site of the doped Sb in the ZnO single crystal,resulting in the formation of a donor.Blue emission is observed from the PL spectrum of the Sb doped ZnO single crystal,which is related with a shallow donor defect in ZnO.The results indicate that a high concentration of donor defects forms in ZnO after Sb doping at high temperature,making it difficult to obtain p-type material. |
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| Keywords: | ZnO single crystal doping defect |
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