| 太赫兹Si/SiGe量子级联激光器波导模拟 |
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| 引用本文： | 陈锐,林桂江,陈松岩,李成,赖虹凯,余金中. 太赫兹Si/SiGe量子级联激光器波导模拟[J]. 半导体学报, 2008, 29(5): 893-897 |
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| 作者姓名： | 陈锐 林桂江 陈松岩 李成 赖虹凯 余金中 |
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| 作者单位： | 1. 厦门大学物理系,厦门大学半导体光子学研究中心,厦门,361005
2. 厦门大学物理系,厦门大学半导体光子学研究中心,厦门,361005;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(973计划) |
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| 摘 要： | 波导层结构设计是制备太赫兹(THz)量子级联激光器的关键问题之一.本文基于德鲁得(Drude)模型,利用时域有限差分(FDTD)法,对Si/SiGe量子级联激光器的波导层进行优化设计,从理论上对传统的递变折射率波导、单面金属波导、双面金属波导以及金属/金属硅化物波导横磁模(TM模)的模式损耗和光场限制因子进行了对比分析.结果表明,金属/金属硅化物波导不但可以减小波导损耗,而且有很高的光学限制因子,同时其工艺也比双面金属波导容易实现,为Si/SiGe太赫兹量子级联激光器波导层的设计提供了一定的理论指导.
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| 关 键 词： | 太赫兹 Si/SiGe 量子级联激光器 波导 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-01-06 |
Waveguide Simulation of a THz Si/SiGe Quantum Cascade Laser |
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| Chen Rui, Lin Guijiang, Chen Songyan, Li Cheng, Lai Hongkai, Yu Jinzhong. Waveguide Simulation of a THz Si/SiGe Quantum Cascade Laser[J]. Journal of Semiconductors, 2008, In Press. Chen R, Lin G J, Chen S Y, Li C, Lai H K, Yu J Z. Waveguide Simulation of a THz Si/SiGe Quantum Cascade Laser[J]. J. Semicond., 2008, 29(5): 893.Export: BibTex EndNote |
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| Authors: | Chen Rui Lin Guijiang Chen Songyan Li Cheng Lai Hongkai Yu Jinzhong |
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| Affiliation: | Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China;Department of Physics,Semiconductor Photonics Research Center, Xiamen University,Xiamen 361005,China |
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| Abstract: | The waveguide design is one of the most important parts in a terahertz quantum cascade laser(QCL). Si/SiGeQCL waveguides, based on the Drude model and finite-difference time-domain (FDTD) method, are designed by the tradi-tional refractive index waveguide structure, the single-sided metal structure, the double-metal clad structure, and a novelmetal/metal silicide structure. The metal/metal silicide structure, showing high modal confinement,is convenient in processengineering and is expected to be a viable waveguide solution for Si/SiGe QCLs in the THz range. |
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| Keywords: | terahertz Si/SiGe quantum cascade laser waveguide |
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