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任意势垒隧穿几率的一种高精度数值算法
引用本文:丁武昌,徐学俊,成步文,左玉华,余金中,王启明. 任意势垒隧穿几率的一种高精度数值算法[J]. 半导体学报, 2008, 29(2): 201-205
作者姓名:丁武昌  徐学俊  成步文  左玉华  余金中  王启明
作者单位:中国科学院半导体研究所光电集成实验室,北京,100083
摘    要:基于龙格-库塔算法求解薛定谔方程,并对获得的数值结果进行分析得出精确的量子隧穿几率.通过适当的处理,该方法适用于任意势垒的情形.利用该方法计算了多种结构的隧穿几率,如抛物线型势垒及双势垒,获得了高精度的隧穿几率.同时计算了MOS结构的隧穿电流密度,结果与Fowler-Nordheim隧穿完全吻合,表明了该方法的适用性.

关 键 词:隧穿系数  隧穿几率  龙格-库塔法
收稿时间:2015-08-18
修稿时间:2007-10-08

A Numerical Method for Calculating Transmission Coefficients Across Arbitrary Potential Barriers with High Accuracy
Ding Wuchang, Xu Xuejun, Cheng Buwen, Zuo Yuhua, Yu Jinzhong, Wang Qiming. A Numerical Method for Calculating Transmission Coefficients Across Arbitrary Potential Barriers with High Accuracy[J]. Journal of Semiconductors, 2008, In Press. Ding W C, Xu X J, Cheng B W, Zuo Y H, Yu J Z, Wang Q M. A Numerical Method for Calculating Transmission Coefficients Across Arbitrary Potential Barriers with High Accuracy[J]. J. Semicond., 2008, 29(2): 201.Export: BibTex EndNote
Authors:Ding Wuchang  Xu Xuejun  Cheng Buwen  Zuo Yuhua  Yu Jinzhong  Wang Qiming
Affiliation:State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:We report a new method for calculating transmission coefficients across arbitrary potential barriers based on the Runge-Kutta method. A numerical solution of the Schr6dinger equation is calculated using the Runge-Kutta method, and a new model is established to analyze the numerical results to find the transmission coefficient. This technique is applied to various cases,such as parabolic potential barrier and double-barrier structures. Transmission probability with high precision is obtained and discussed. The tunnelling current density through a MOS structure is also explored and the result coincides with the Fowler-Nordheim model,which indicates the applicability of our method.
Keywords:transmission coefficient  tunneling probability  Runge-Kutta method
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