| X波段低损耗高隔离开关应用的GaAs PIN二极管 |
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| 引用本文： | 吴茹菲,张海英,尹军舰,张健,刘会东,刘训春. X波段低损耗高隔离开关应用的GaAs PIN二极管[J]. 半导体学报, 2008, 29(5): 832-835 |
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| 作者姓名： | 吴茹菲 张海英 尹军舰 张健 刘会东 刘训春 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(973计划) |
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| 摘 要： | 报道了一种适用于X波段的低损耗高隔离度开关的GaAs PIN二极管.讨论了GaAs PIN二极管的物理特性和主要电学参数对开关性能的影响,并且介绍了工艺制备过程.测试结果表明在100MHz～12.1GHz范围内,正向电流为10mA时的开关电阻小于2.2Ω,而反向电压为-10V时开关电容小于20fF.
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| 关 键 词： | GaAs PIN二极管 低损耗 高隔离 开关 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-12-19 |
GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches |
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| Wu Rufei, Zhang Haiying, Yin Junjian, Zhang Jian, Liu Huidong, Liu Xunchun. GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches[J]. Journal of Semiconductors, 2008, In Press. Wu R F, Zhang H Y, Yin J J, Zhang J, Liu H D, Liu X C. GaAs PIN Diodes for X-Band Low Loss and High Isolation Switches[J]. J. Semicond., 2008, 29(5): 832.Export: BibTex EndNote |
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| Authors: | Wu Rufei Zhang Haiying Yin Junjian Zhang Jian Liu Huidong Liu Xunchun |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | GaAs PIN diodes optimized for X-band low loss and high isolation switch application are presented. The impactof diode physical characteristics and electrical parameters on switch performance is discussed. A new structure for GaAsPIN diodes is proposed and the fabrication process is described. GaAs PIN diodes with an on-state resistance of <2. 2Ω andoff-state capacitance <20fF in the range of 100MHz to 12.1GHz are obtained. |
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| Keywords: | GaAs PIN diodes low-loss high-isolation switch |
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