| 多重气固反应制备一维SiC纳米线 |
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| 引用本文： | 李甲林,唐元洪,李小祥,李晓川. 多重气固反应制备一维SiC纳米线[J]. 半导体学报, 2008, 29(9): 1786-1789 |
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| 作者姓名： | 李甲林 唐元洪 李小祥 李晓川 |
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| 作者单位： | 湖南大学材料科学与工程学院,长沙,410082 |
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| 基金项目： | 教育部跨世纪优秀人才培养计划 |
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| 摘 要： | 以硅片、石墨和SiO2粉末为原料,通过多重气同反应成功地制备出一维SiC纳米线.X射线衍射仪分析表明生成产物为立方结构的β-SiC.利用扫描电子显微镜、透射电子显微镜和高分辨透射电子显微镜(HRTEM)观察,该一维SiC纳米线的直径为30～50nm,长度可达几十甚至上百微米,为沿[111]方向生长的单晶β-SiC纳米线.根据多次对比实验的结果,由多重气固(VS)反应提出了该方法制备SiC纳米线的生长机理.
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| 关 键 词： | SiC纳米线 多重气固反应 生长机理 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-04-07 |
Synthesis of SiC Nanowires via Multiple VS Reactions |
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| Li Jialin, Tang Yuanhong, Li Xiaoxiang, Li Xiaochuan. Synthesis of SiC Nanowires via Multiple VS Reactions[J]. Journal of Semiconductors, 2008, In Press. Li J L, Tang Y H, Li X X, Li X C. Synthesis of SiC Nanowires via Multiple VS Reactions[J]. J. Semicond., 2008, 29(9): 1786.Export: BibTex EndNote |
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| Authors: | Li Jialin Tang Yuanhong Li Xiaoxiang Li Xiaochuan |
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| Affiliation: | College of Materials Science and Engineering,Hunan University,Changsha 410082,China;College of Materials Science and Engineering,Hunan University,Changsha 410082,China;College of Materials Science and Engineering,Hunan University,Changsha 410082,China;College of Materials Science and Engineering,Hunan University,Changsha 410082,China |
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| Abstract: | SiC nanowires are successfully synthesized via multiple VS reactions using silicon chips,graphite,and SiO2 powder as raw materials.XRD results identify the product as a cubic β-SiC structure.SEM and TEM images show that the diameter of the SiC nanowires is in the range of 30~50nm and length is up to tens of microns,even over one hundred microns.HRTEM analysis indicates single crystalline β-SiC nanowires with a main growth direction of ［111］.According to a series of experiments,a mechanism of multiple VS reactions is proposed to explain the formation of SiC nanowires. |
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| Keywords: | SiC nanowires multiple VS reactions mechanism |
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