| 非晶硅薄膜的红外热敏特性 |
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| 引用本文： | 马铁英,李铁,刘文平,王跃林. 非晶硅薄膜的红外热敏特性[J]. 半导体学报, 2008, 29(11): 2265-2269 |
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| 作者姓名： | 马铁英 李铁 刘文平 王跃林 |
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| 作者单位： | 1. 中国计量学院光学与电子科技分院,杭州,310018;中国科学院微系统与信息技术研究所传感技术国家重点实验室,上海,200050
2. 中国科学院微系统与信息技术研究所传感技术国家重点实验室,上海,200050 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家重点基础研究发展计划(973计划) |
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| 摘 要： | 用PECVD技术制备了不同掺磷比的非晶硅薄膜,然后退火改性.红外透射光谱揭示了薄膜内部的键合模式随生长工艺条件变化的规律;测量和分析了非晶硅红外热吸收及电阻温度系数与薄膜结构之间的关系.综合考虑非晶硅电阻率和电阻温度系数两个因素,采用掺杂比0.025,退火温度600℃的薄膜样品进一步研究.
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| 关 键 词： | 非晶硅 退火 红外透射 电阻温度系数 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-07-21 |
Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD |
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| Ma Tieying, Li Tie, Liu Wenping, Wang Yuelin. Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD[J]. Journal of Semiconductors, 2008, In Press. Ma T Y, Li T, Liu W P, Wang Y L. Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD[J]. J. Semicond., 2008, 29(11): 2265.Export: BibTex EndNote |
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| Authors: | Ma Tieying Li Tie Liu Wenping Wang Yuelin |
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| Affiliation: | College of Optical and Electronic Technology,China Jiliang University,Hangzhou 310018,China;State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China |
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| Abstract: | A hydrogenated amorphous silicon of different phosphor doping concentrations is fabricated by PECVD.FTIR spectra and TCR of a-Si:H are obtained after annealing at different temperatures and times.The structure and bonding of the film are decided by different annealing conditions,leading to the change in the thermal and electric characteristics.Lu’s model is used to explain the phenomena,and an optimum preparation is attained with a doping ratio of 0.025 and an annealing temperature of 600℃. |
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| Keywords: | amorphous silicon annealing FTIR temperature coefficient resistance |
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