| 2dB噪声系数的Ka波段宽带高增益单片低噪声放大器 |
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| 引用本文： | 黄清华,刘训春,郝明丽,张宗楠,杨浩. 2dB噪声系数的Ka波段宽带高增益单片低噪声放大器[J]. 半导体学报, 2008, 29(8): 1457-1460 |
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| 作者姓名： | 黄清华 刘训春 郝明丽 张宗楠 杨浩 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 报道了一种基于商用0.15um赝配高电子迁移率晶体管工艺的单片低噪声放大器,工作频率范围为23~36GHz.它采用自偏置结构.对晶体管栅宽进行了优化设计减小栅极电阻,以得到低的噪声系数.采用吸收回路和加电阻电容网络的直流偏置结构提高电路稳定性,用多谐振点方法和负反馈技术扩展带宽.测试结果表明,其噪声系数低于2.0dB,在31GHz处,噪声系数仅为1.6dB.在整个工作频带范崮内,增益大于26dB,输入回波损耗大于11dB,输出回波损耗大于13dB.36GHz处的ldB压缩点输出功率为14dBm.芯片尺寸为2.4mm×1mm.
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| 关 键 词： | 微波单片集成电路 低噪声放大器 Ka波段 噪声系数 高增益 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-04-22 |
A Ka Broadband High Gain Monolithic LNA with a Noise Figure of 2dB |
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| Huang Qinghua, Liu Xunchun, Hao Mingli, Zhang Zongnan, Yang Hao. A Ka Broadband High Gain Monolithic LNA with a Noise Figure of 2dB[J]. Journal of Semiconductors, 2008, In Press. Huang Q H, Liu X C, Hao M L, Zhang Z N, Yang H. A Ka Broadband High Gain Monolithic LNA with a Noise Figure of 2dB[J]. J. Semicond., 2008, 29(8): 1457.Export: BibTex EndNote |
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| Authors: | Huang Qinghua Liu Xunchun Hao Mingli Zhang Zongnan Yang Hao |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | A four-stage monolithic microwave integrated circuits(MMIC)low noise amplifier(LNA)operating from 23 to 36GHz is reported using commercially available 0.15um PHEMT technology.The LNA is self-biased.To achieve a low noise characteristic,careful optimizations of gate width are performed to reduce gate resistance.Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability.Multiple resonance points and negative feedback technologies are used to widen the bandwidth.Measurements show a noise figure(NF)of less than 2.OdB,and the lowest NF is only 1.6dB at a frequency of 31GHz.In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 1 1 and 13dB,respectively.The output power at ldB compression gain of 36GHz is about 14dBm.The chip area is 2.4mm×1mm. |
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| Keywords: | MMIC LNA Ka broadband NF high gain |
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