| SEU加固存储单元中的多节点翻转 |
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| 引用本文： | 刘必慰,郝跃,陈书明.SEU加固存储单元中的多节点翻转[J].半导体学报,2008,29(2). |
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| 作者姓名： | 刘必慰 郝跃 陈书明 |
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| 作者单位： | 1. 国防科技大学计算机学院,长沙,410073
2. 西安电子科技大学,西安,710071 |
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| 摘 要： | 使用3D器件模拟了SEU加固单元的多节点翻转(multiple node upset,MNU)问题.结果表明瞬时悬空节点和电荷横向扩散是MNU的关键原因.对比了MNU和不同存储单元之间的MBU(multiple bit upset),发现它们之间的特点存在较大差异.最后讨论了避免MNU的方法.
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| 关 键 词： | 多节点翻转 加固单元 电荷收集 |
Multiple Node Upset in SEU Hardened Storage Cells |
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| Liu Biwei,Hao Yue,Chen Shuming.Multiple Node Upset in SEU Hardened Storage Cells[J].Chinese Journal of Semiconductors,2008,29(2). |
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| Authors: | Liu Biwei Hao Yue Chen Shuming |
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| Abstract: | We study the problem of multiple node upset (MNU) using three-dimensional device simulation. The results show the transient floating node and charge lateral diffusion are the key reasons for MNU. We compare the MNU with multiple bit upset (MBU),and find that their characteristics are different. Methods to avoid MNU are also discussed. |
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| Keywords: | multiple node upset hardened cell charge collection |
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