| 空位对普通和掺氮直拉硅单晶中氧沉淀形核的作用 |
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| 引用本文： | 姜翰钦,马向阳,杨德仁,阙端麟. 空位对普通和掺氮直拉硅单晶中氧沉淀形核的作用[J]. 半导体学报, 2008, 29(10): 1984-1987 |
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| 作者姓名： | 姜翰钦 马向阳 杨德仁 阙端麟 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 教育部长江学者和创新团队发展计划，教育部跨世纪优秀人才培养计划 |
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| 摘 要： | 研究了普通直拉(CZ)硅单晶和掺氮直拉(NCZ)硅单晶在氩气氛下进行1250℃/50s的快速热处理(RTP)后,再经600～1000℃的不同温区内的缓慢升温处理和1000℃保温处理后的氧沉淀行为.研究表明,由RTP引入的空位在700～800℃间缓慢升温退火时对CZ硅中氧沉淀形核的促进作用最显著,而在800～900℃间缓慢升温退火时对NCZ硅中氧沉淀形核的促进作用最显著;在800以上,氮促进氧沉淀形核的作用比空位更强.此外,提出了适用于CZ和NCZ硅片的基于高温RTP和低温缓慢升温热处理的内吸杂工艺.
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| 关 键 词： | 直拉硅单晶 氧沉淀 形核 空位 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-05-21 |
Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon |
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| Jiang Hanqin, Ma Xiangyang, Yang Deren, Que Duanlin. Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon[J]. Journal of Semiconductors, 2008, In Press. Jiang H Q, Ma X Y, Yang D R, Que D L. Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon[J]. J. Semicond., 2008, 29(10): 1984.Export: BibTex EndNote |
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| Authors: | Jiang Hanqin Ma Xiangyang Yang Deren Que Duanlin |
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| Affiliation: | State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China |
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| Abstract: | The oxygen precipitation behaviors in conventional and nitrogen-doped Czochralski (NCZ) silicon subjected to the rapid thermal processing (RTP) at 1250℃ for 50s followed by the ramping anneal in different temperature intervals in the range from 600 to 1000℃ and isothermal annealing at 1000℃ are investigated. The results show that the RTP-induced vacancies enhance the nucleation of oxygen precipitates most significantly during the ramping anneal from 700 to 800℃ for conventional CZ silicon.Meanwhile,for NCZ silicon,the most significant vacancy-enhancement of nucleation of oxygen precipitates occurs during the ramping anneal from 800 to 900℃. Nitrogen is superior to vacancy for enhancement of oxygen precipitate nucleation at temperatures higher than 800℃. Furthermore,the internal gettering processes appropriate for CZ and NCZ silicon wafers based on the RTP and ramping anneal in the low temperature range are proposed. |
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| Keywords: | Czochralski silicon oxygen precipitation nucleation vacancy |
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