259W准连续无铝808nm激光二极管线列阵

通过优化张应变量子阱外延结构和设计线列阵双沟道深隔离槽腐蚀工艺,采用低压金属有机化学气相沉积法(LP-MOCVD)生长了GaAsP/GalnP/AlGaInP单量子阱分别限制异质结激光器材料,并利用该材料制备r填充因子为50%的lcm宽线列阵激光巴条,用扫描电子显微镜(SEM)分析了隔离槽的形貌.在准连续工作条件(200μs脉宽,2%占空比)下,封装在被动制冷标准铜热沉上的器件在测试设备允许的最大驱动电流300A时可获得259W的输出功率,未观察到腔面光学灾变性损伤的发生.最高功率转换效率在工作电流为104A时达52%,此时输出功率为100W,激射光谱的中心波长为807.8nm,半高宽为2.4nm,快慢轴远场发散角分别为29.3°和7.5°.

259W QCW Al-Free 808nm Linear Laser Diode Arrays

Through optimizing the tensile-strained single quantum well (SQW) epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GalnP/AIGalnP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and 1era-wide laser bars with 50% fill factor are fabricated. The cross sections of the channels are analyzed using scanning electron microscope. Mounted on passively cooled copper heat sinks,the laser bars achieve an output power of 259W in quasi-continuouswave (200μs pulse width and 2% duty cycles) operation at a driving current of 300A,which is the upper limit of power supply in our measurement setup, and no catastrophically optical mirror damage is observed. A peak power conversion efficiency of 52% is obtained at 104A with 100W output power.At a high-power operation of 100W,the spectrum of the bar has a centric wavelength of 807. 8nm and full width at half maximum of 2. 4nm. The full angles at half maximum power for fast axis and slow axis are 29.3°and 7.5°, respectively.