| 静电感应晶闸管在阻断态时的SIT-BJT等效工作模型 |
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| 引用本文： | 杨建红,汪再兴,李思渊. 静电感应晶闸管在阻断态时的SIT-BJT等效工作模型[J]. 半导体学报, 2008, 29(4): 645-649 |
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| 作者姓名： | 杨建红 汪再兴 李思渊 |
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| 作者单位： | 兰州大学物理科学与技术学院微电子研究所,兰州,730000 |
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| 摘 要： | 提出了一种描述静电感应晶闸管在阻断态时的工作机理的SIT-BJT等效模型.在器件物理的基础上,分析得到的这个模型衔接了静电感应晶闸管的物理参数和结构参数,而且给出的数值分析和理论分析证明了这个模型的正确性.在该模型的基础上,讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化.
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| 关 键 词： | 静电感应晶闸管 SIT-BJT等效模型 电流放大因子 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-11-30 |
An SIT-BJT Operation Model for SITh in the Blocking State |
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| Yang Jianhong, Wang Zaixing, Li Siyuan. An SIT-BJT Operation Model for SITh in the Blocking State[J]. Journal of Semiconductors, 2008, In Press. Yang J H, Wang Z X, Li S Y. An SIT-BJT Operation Model for SITh in the Blocking State[J]. J. Semicond., 2008, 29(4): 645.Export: BibTex EndNote |
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| Authors: | Yang Jianhong Wang Zaixing Li Siyuan |
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| Affiliation: | Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China |
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| Abstract: | A SIT-BIT model is proposed for static induction thyristors (SITh) operation in the blocking state. On the basis of the physical mechanism, this model is presented analytically in terms of governing equations that link the electrical parameters to the structural parameters. The model is verified by numerical simulation and theoretical analysis. Based on the model,the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed. |
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| Keywords: | static induction thyristor SIT-BJT model current amplification factor |
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