| InAs/GaAs量子点光致发光光谱多峰结构发光本质 |
| |
| 引用本文： | 梁志梅,吴巨,金鹏,吕雪芹,王占国. InAs/GaAs量子点光致发光光谱多峰结构发光本质[J]. 半导体学报, 2008, 29(11) |
| |
| 作者姓名： | 梁志梅 吴巨 金鹏 吕雪芹 王占国 |
| |
| 作者单位： | 中国科学院半导体研究所,半导体材料科学重点实验室,北京,100083 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划)，国家重点基础研究发展计划(973计划) |
| |
| 摘 要： | 研究了InAs/GaAs量子点光致发光光谱中出现的多峰结构.观察到随着激发功率的增加光谱中发光峰的数目逐渐增多并且部分发光峰的峰位随激发功率的增加向高能量方向移动.解释了各发光峰的来源并结合量子点能级结构的特点,计算了量子点中电子和空穴各子带间的能级间距.
|
| 关 键 词： | 量子点 多峰结构 能级结构 光致发光 |
The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots |
| |
| Liang Zhimei,Wu Ju,Jin Peng,Lü Xueqin,Wang Zhanguo. The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots[J]. Chinese Journal of Semiconductors, 2008, 29(11) |
| |
| Authors: | Liang Zhimei Wu Ju Jin Peng Lü Xueqin Wang Zhanguo |
| |
| Abstract: | Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated.Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks.By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified.Furthermore,inter-subband spacing of electrons and holes arc deduced. |
| |
| Keywords: | quantum dots multi-peak structure energy-level structure photoluminescence |
| 本文献已被 万方数据 等数据库收录！ |
