| T形栅In0.52Al0.48As/In0.6Ga0.4As MHEMTs功率器件 |
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| 引用本文： | 黎明,张海英,徐静波,付晓君. T形栅In0.52Al0.48As/In0.6Ga0.4As MHEMTs功率器件[J]. 半导体学报, 2008, 29(12) |
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| 作者姓名： | 黎明 张海英 徐静波 付晓君 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家重点基础研究发展规划(973计划)，装备预先研究项目，中国科学院微电子研究所所长基金 |
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| 摘 要： | 利用电子束光刻技术制备了200nm栅长GaAs基T型栅InAlAs/lnGaAs MHEMT器件.该GaAs基MHEMT器件具有优越的直流、高频和功率性能,跨导、饱和漏电流密度、阈值电压、电流增益截止频率和最大振荡频率分别达到510mS/mm,605mA/mm,-1.8V,138GHz和78GHz.在8GHz下,输人功率为-0.88(2.11)dBm时,输出功率、增益、PAE、输出功率密度分别为14.05(13.79)dBm,14.9(11.68)dB,67.74(75.1)%,254(239)mW/mm,为进一步研究高性能GaAs基MHEMT功率器件奠定了基础.
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| 关 键 词： | MHEMT InAlAs/InGaAs 功率特性 T型栅 |
Power Characteristics of Metamorphic In0.52 Al0.48 As/In0.6 Ga0.4As HEMTs on GaAs Substrates with T-Shaped Gate |
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| Li Ming,Zhang Haiying,Xu Jingbo,Fu Xiaojun. Power Characteristics of Metamorphic In0.52 Al0.48 As/In0.6 Ga0.4As HEMTs on GaAs Substrates with T-Shaped Gate[J]. Chinese Journal of Semiconductors, 2008, 29(12) |
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| Authors: | Li Ming Zhang Haiying Xu Jingbo Fu Xiaojun |
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| Abstract: | 200nm gate-length power InAlAs/InGaAs MHEMTs with T-shaped gate are characterized for DC, RF, and power performance. The MHEMTs show excellent DC output characteristics with an extrinsic transconductance of 510mS/mm and a threshold voltage of - 1.8V. The fT and fmax obtained for the 0.2μm×100μm MHEMTs are 138 and 78GHz,respectively. Power characteristics are obtained under different frequencies. When input power (Pin) is -0.88dBm (or 2.11dBm), the MHEMTs exhibit high power characteristics at 8GHz. Output power (Pout), associated gain, power added efficiency (PAE) and density of Pout are 4.05(13.79)dBm,14.9(11.68)dB,67.74(75.1)% ,254(239)mW/mm respectively. These promising results are on the path to the application of millimeter wave devices and integrated circuits with improved manufacturability over InP HEMT. |
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| Keywords: | MHEMT InALAs/InGaAs power characteristics T-shaped gate |
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