| RTD在压力下的弛豫振荡特性 |
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| 引用本文： | 仝召民,薛晨阳,张斌珍,刘俊,乔慧. RTD在压力下的弛豫振荡特性[J]. 半导体学报, 2008, 29(1) |
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| 作者姓名： | 仝召民 薛晨阳 张斌珍 刘俊 乔慧 |
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| 作者单位： | 中北大学电子测试技术国家重点实验室,仪器科学与动态测试教育部重点实验室,太原,030051 |
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| 摘 要： | 报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性.采用Pspice 8.0软件仿真并设计了振荡电路,测得其振荡频率达200kHz.在(100)半绝缘(SI)GaAs衬底上利用分子束外延(MBE)技术生长了AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构(DBRTS),并采用Au/Ge/Ni/Au金属化和空气桥结构成功加工出了RTD.由于RTD的压阻效应,采用显微喇曼光谱仪标定所加应力大小,对RTD在加压条件下的振荡特性进行了研究,结果表明其弛豫振荡频率大致有-17.9kHz/MPa的改变量.
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| 关 键 词： | 共振隧穿二极管 弛豫振荡 喇曼光谱仪 压阻效应 |
RTD's Relaxation Oscillation Characteristics with Applied Pressure |
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| Tong Zhaomin,Xue Chenyang,Zhang Binzhen,Liu Jun,Qiao Hui. RTD's Relaxation Oscillation Characteristics with Applied Pressure[J]. Chinese Journal of Semiconductors, 2008, 29(1) |
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| Authors: | Tong Zhaomin Xue Chenyang Zhang Binzhen Liu Jun Qiao Hui |
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| Abstract: | The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported. The oscillation circuit is simulated and designed by Pspice 8.0, and the measured oscillation frequency is up to 200kHz. Using molecular beam epitaxy (MBE) ,AlAs/InxGa1-xAs/GaAs double barrier resonant tunneling structures (DBRTS) are grown on (100) semi-insulated (SI) GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an airbridge structure. Because of the piezoresistive effect of RTD, with Raman spectrum to measure the applied pressure, the relaxation oscillation characteristics have been studied, which show that the relaxation oscillation frequency has approximately a - 17.9kHz/MPa change. |
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| Keywords: | resonant tunneling diode relaxation oscillation Raman spectrum piezoresistive effect |
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