| 增强型AlGaN/GaN槽栅HEMT |
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| 引用本文： | 王冲,张金凤,全思,郝跃,张进城,马晓华.增强型AlGaN/GaN槽栅HEMT[J].半导体学报,2008,29(9). |
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| 作者姓名： | 王冲 张金凤 全思 郝跃 张进城 马晓华 |
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| 作者单位： | 西安电子科技大学微电子研究所,宽禁带半导体材料与器件重点实验室,西安,710071 |
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| 摘 要： | 成功研制出蓝宝石衬底的槽栅增强型AlGaN/GaN HEMT.栅长1.2μm.源漏间距4μm,槽深15nm的器件在3V栅压下饱和电流达到332mA/mm,最大跨导为221mS/mm,阈值电压为0.57V,ft和,fmax分别为5.2和9.3GHz.比较刎蚀前后的肖特基,Ⅰ-Ⅴ特性,证实了槽栅刻蚀过程中非有意淀积介质层的存在.深入研究了增强型器件亚阈特性和频率特性.
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| 关 键 词： | 高电子迁移率晶体管 AlGaN/GaN 槽栅 阈值电压 |
An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate |
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| Wang Chong,Zhang Jinfeng,Quan Si,Hao Yue,Zhang Jincheng,Ma Xiaohua.An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate[J].Chinese Journal of Semiconductors,2008,29(9). |
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| Authors: | Wang Chong Zhang Jinfeng Quan Si Hao Yue Zhang Jincheng Ma Xiaohua |
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| Abstract: | Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1.2μm gate-length,4mm space between source and drain,and 15nm recessed-gate depth exhibit a maximum drain current of 332mA/mm at 3V,a maximum transconductance of 221mS/mm,a threshold voltage of 0. 57V, ft of 5.2GHz, and fmax of 9.3GHz. A dielectric layer formed unintentionally during recessedgate etching is confirmed by contrasting the Schottky Ⅰ-Ⅴ characteristics of pre-etching and post-etching. The frequency characteristics and subthreshold characteristics of the devices are studied in detail. |
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| Keywords: | high electron mobility transistors AlGaN/GaN recessed-gate threshold voltage |
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