电场对半导体GaAs量子阱中束缚磁极化子性质的影响

研究了在外加电场作用下无限深GaAs半导体量子阱中束缚磁极化子的性质,采用线性组合算符及幺正变换方法导出了量子阱中弱耦合束缚磁极化子的基态能量与阱宽、电场强度、磁感应强度、库仑束缚势的变化关系,同时讨论了振动频率和库仑束缚势、外场之间的变化关系.数值计算结果表明:基态能量的绝对值将随电场强度和库仑束缚势的增加而增加,随磁感应强度和阱宽的增加而减小.当阱宽较小时,量子尺寸效应较为明显.

Influence of the Electric Field on the Properties of the Bound Magnetopolaron in GaAs Semiconductor Quantum Wells

The influence of the electric field on the properties of the bound magnetopolaron in an infinite-depth GaAs semiconductor quantum well is investigated using the linear-combination operator and the unitary transformation method. The relationships between the polaron's ground state energy and the Coulomb bound potential, electric field, magnetic field, and well-width are derived and discussed. Our numerical results show that the absolute value of the polaron's ground state energy 'increases as the electric field and the Coulomb bound potential increase, and decreases as the well-width and the magnetic field strength increase. When the well-width is small,the quantum size effect is significant.