| 非均匀厚度漂移区SOI高压器件及其优化设计 |
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| 引用本文： | 罗小蓉,张伟,张波,李肇基,阎斌,杨寿国. 非均匀厚度漂移区SOI高压器件及其优化设计[J]. 半导体学报, 2008, 29(10): 1902-1906 |
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| 作者姓名： | 罗小蓉 张伟 张波 李肇基 阎斌 杨寿国 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 基金项目： | 国家自然科学基金，电子科技大学校科研和校改项目 |
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| 摘 要： | 提出非均匀厚度漂移区SOl高压器件新结构及其优化设计方法.非均匀厚度漂移区调制SOI层的电场并增强埋层电场,从而 提高器件击穿电压.考虑到这种调制效应.提出解析模型用以优化设计该新器件的结构参数.借助解析模型,研究了电场分布和器件击穿电压与结构参数的关系.数值仿真'证实了解析模型的正确性.具有3阶梯的非均匀厚度漂移区SOl器件耐压为常规结构SOl器件的2倍,且保持较低的导通电阻.
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| 关 键 词： | SOI 非均匀厚度漂移区 电场 调制 高压 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-06-05 |
A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization |
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| Luo Xiaorong, Zhang Wei, Zhang Bo, Li Zhaoji, Yan Bin, Yang Shouguo. A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization[J]. Journal of Semiconductors, 2008, In Press. Luo X R, Zhang W, Zhang B, Li Z J, Yan B, Yang S G. A New High Voltage SOI Device with a Nonuniform Thickness Drift Region and Its Optimization[J]. J. Semicond., 2008, 29(10): 1902.Export: BibTex EndNote |
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| Authors: | Luo Xiaorong Zhang Wei Zhang Bo Li Zhaoji Yan Bin Yang Shouguo |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | A new SOI high-voltage device structure with nonuniform thickness drift region (n-uni SOl) and its optimization design method are proposed. Owing to the nonuniform thickness drift region, the electric field in the SOI layer is modulated and the electric field in the buried layer is enhanced, resulting in an enhancement of breakdown voltage. An analytical model taking the modulation effect into account is presented to optimize the device structure. Based on the analytical model, the dependencies of the electric field distribution and breakdown voltage on the device parameters are investigated. Numerical simulations support the analytical model. The breakdown voltage of the n-uni SOl LDMOS with n=3 is twice as high as that of a conventional SOl while its on-resistance maintains low. |
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| Keywords: | SOI nonuniform thickness drift region electric field modulation high voltage |
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