| 以金属为缓冲层在Si(111)上分子束外延GaN及其表征 |
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| 引用本文： | 林郭强,曾一平,王晓亮,刘宏新. 以金属为缓冲层在Si(111)上分子束外延GaN及其表征[J]. 半导体学报, 2008, 29(10): 1998-2002 |
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| 作者姓名： | 林郭强 曾一平 王晓亮 刘宏新 |
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| 作者单位： | 中国科学院半导体研究所,半导体材料科学重点实验室,材料科学中心,北京,100083 |
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| 摘 要： | 用电子束蒸发方法在Si(111)村底蒸发了Au/Cr和Au/Ti/AI/Ti两种金属缓冲层,然后在金属缓冲层上用气源分子束外延(GSMBE)生长GaN.两种缓冲层的表面部比较平整和均匀,都是具有Au(111)面掸优取向的立方相Au层.在Au/Cr/Si(111)上MBE生长的GaN,生长结束后出现剥离.在Au/Ti/Al/Ti/Si(111)上无AIN缓冲层直接生长GaN,得到的是多品GaN;先在800℃生长一层AIN缓冲层,然后在710℃生长GaN,得到的足沿GaN(0001)面择优取向的六方相GaN.将Au/Ti/Al/Ti/Si(111)在 800℃下退火20min,金属层收缩为网状结构,并且成为多晶,不再具有Au(111)方向择优取向.
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| 关 键 词： | GaN 分子束外延 Si(111) 缓冲层 金属 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-04-22 |
Effect of a Metal Buffer Layer on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia |
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| Lin Guoqiang, Zeng Yiping, Wang Xiaoliang, Liu Hongxin. Effect of a Metal Buffer Layer on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia[J]. Journal of Semiconductors, 2008, In Press. Lin G Q, Zeng Y P, Wang X L, Liu H X. Effect of a Metal Buffer Layer on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia[J]. J. Semicond., 2008, 29(10): 1998.Export: BibTex EndNote |
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| Authors: | Lin Guoqiang Zeng Yiping Wang Xiaoliang Liu Hongxin |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science,Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | Au/Cr and Au/Ti/Al/Ti metal buffer layers were respectively deposited on Si(111) substrate by electron beam evaporation,and GaN was grown on these metal films by gas source molecular beam epitaxy(GSMBE).The as-deposited metal films have a flat and featureless surface and show diffraction peaks of (111)-oriented cubic Au.The GaN grown on Au/Cr/Si(111) breaks off when cooled to room temperature.GaN grown on Au/Ti/Al/Ti/Si(111) without an AlN buffer layer was amorphous.By adding an AlN buffer,GaN grown on AlN/Au/Ti/Al/Ti/Si(111) shows diffraction peaks of (0001)-oriented hexagonal GaN.After annealing at 800℃ for 20min,the metal films of Au/Ti/Al/Ti/Si(111) became amorphous and convert to a porous metal network. |
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| Keywords: | GaN MBE Si(111) buffer layer metal |
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